http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100796754-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14658 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T1-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2001-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100796754-B1 |
| titleOfInvention | Thin-film transistor array substrate for thin-ray detectors and manufacturing method |
| abstract | Gate wiring is formed on an insulated substrate, and a gate insulating film covers the gate wiring. The semiconductor layer is formed on the gate insulating film of the gate electrode, and the ohmic contact layer is formed on the semiconductor layer. A data line is formed on the ohmic contact layer and the gate insulating layer, and a lower electrode connected to the drain electrode of the data line on the gate insulating layer of the pixel, an amorphous silicon layer including N-type impurities, and an amorphous silicon without impurities. A PIN photodiode comprising a photoconductor layer made of a layer and an amorphous silicon layer containing P-type impurities and an upper electrode made of a transparent conductive material is formed. A chemical vapor deposition film having a low dielectric constant of 4,0 or less is formed on the data wiring, the semiconductor layer and the upper electrode which are not covered, and the chemical vapor deposition film has contact holes that expose the data line and the upper electrode, respectively. At this time, before forming the chemical vapor deposition film, an insulating film made of an insulating material such as silicon nitride may be further formed. An auxiliary data line is formed on the chemical vapor deposition film, which is connected to the data line through a bias wire connected to the upper electrode through a contact hole and another contact hole, and overlaps the data line.n n n n X-ray, photoconductor, PIN, leakage current, SiOC |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8803210-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7964903-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7728329-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100956338-B1 |
| priorityDate | 2001-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.