http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100795916-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2006-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100795916-B1 |
| titleOfInvention | Semiconductor devices, electro-optical devices and electronic devices |
| abstract | An object of the present invention is to provide a semiconductor device, an electro-optical device, and an electronic device having a small change in the characteristics of a transistor even when the substrate is curved (deformed).n n n And a semiconductor layer and first and second transistors 100 and 200 formed using the semiconductor layer, wherein the conductances of the first and second transistors are complementarily changed with respect to the curvature of the semiconductor layer. Even if the substrate is curved, it is possible to suppress the characteristic change of the semiconductor device due to the bending.n n n n Semiconductor layer, transistor, gate, drain |
| priorityDate | 2005-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.