http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100792365-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate | 2006-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2008-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2008-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100792365-B1 |
titleOfInvention | Method of manufacturing recess gate of semiconductor device |
abstract | SUMMARY OF THE INVENTION The present invention provides a method of manufacturing a recess gate of a semiconductor device suitable for preventing degradation of a recess gate due to an additive that occurs between an active region and a device isolation layer when forming a recess. A method of manufacturing a recess gate includes etching a predetermined region of a semiconductor substrate to form a recess having a fine line width smaller than a predetermined line width; Isotropically etching both sidewalls of the recess to form a recess having the predetermined line width; And forming a gate on the recess having the predetermined line width. Accordingly, the present invention can lower the height of the peaks generated when the recess is formed, and thus deterioration of the characteristics of the gate insulating film and the stress points As a result, the vulnerabilities that acted as the leak source are disappeared, which increases the channel length of the recess gate.n n n n Recess Gate, Isotropic Etch, Fine Pattern, Horn, Channel Length, Process Margin |
priorityDate | 2006-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.