http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100791477-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-066 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-023 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2006-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79b92c48a624d13203e509fa103844ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_890be22fe103ae1bb0ebde0bea372279 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e811f961e34eb6951146444b6a88bfc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ce77d2381ccfa0a4f0d00158c88aa01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6cdc201b456ff5c73ed799a9554e2aa |
| publicationDate | 2008-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100791477-B1 |
| titleOfInvention | Phase change memory unit, manufacturing method thereof, phase change memory device including same and manufacturing method thereof |
| abstract | A phase change memory unit, a manufacturing method thereof, a phase change memory device including the same, and a manufacturing method thereof are disclosed. A first electrode is formed on the substrate, and an insulating structure having an opening exposing the first electrode is formed on the first electrode. After the nucleation layer pattern is formed on the sidewalls of the first electrode and the opening, a phase change material layer pattern is formed on the nucleation layer pattern while filling the opening. A second electrode is formed on the phase change material layer pattern. A chalcogenide compound such as GST is deposited on a nucleation layer composed of a metal oxide having high electrical insulation by chemical vapor deposition to form a three-dimensional phase change material layer filling the opening. Therefore, a separate breakdown is not required to cause phase transition in the phase change material layer pattern, and it is possible to prevent the reset current from being pushed during the phase change of the phase change material layer pattern. In addition, it is possible to prevent the occurrence of an electrical short between the electrodes, it is possible to completely fill the opening while the phase change material layer has a uniform grain size. |
| priorityDate | 2006-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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