http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100789606-B1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-761
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
filingDate 2006-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2007-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100789606-B1
titleOfInvention Semiconductor device and manufacturing method thereof
abstract In the conventional semiconductor device, there is a problem that it is difficult to reduce the device size due to the diffusion of the P-type diffusion layer constituting the isolation region in the horizontal direction. In the semiconductor device of the present invention, an N-type epitaxial layer 8 is formed on the P-type single crystal silicon substrate 6. The substrate 6 and the epitaxial layer 8 are partitioned into a plurality of element formation regions by the separation region 3. The isolation region 3 is formed by connecting the P-type buried diffusion layer 47 and the P-type diffusion layer 48. The P-type buried diffusion layer 47 forms the P-type junction region with the N-type buried diffusion layers 7 and 30. On the other hand, the P type diffusion layer 48 forms the N type diffusion layers 19 and 40 and the PN junction region. By this structure, the diffusion of the P-type buried diffusion layer 47 and the P-type diffusion layer 48 is suppressed in the horizontal direction, and the device size can be reduced.n n n n Monocrystalline Silicon Substrates, N-type buried diffused layers, epitaxial layers, N-channel DMOS transistors, contact holes, photolithography, barrier metal films, back gate electrodes
priorityDate 2005-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S624339-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6327210
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520437
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID16212546
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426098976

Total number of triples: 15.