http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100789028-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-918 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3216 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate | 2006-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100789028-B1 |
| titleOfInvention | Semiconductor devices |
| abstract | The semiconductor device includes an active layer, a first semiconductor layer of a first conductivity type, an overflow disposed between the active layer and the first semiconductor layer, doped with impurities of a first conductivity type, and preventing overflow of electrons or holes. A second conductive layer of a first conductivity type disposed in at least one of a barrier layer, between the active layer and the overflow barrier, and between the overflow barrier and the first semiconductor layer, and the first semiconductor layer and the active layer And an impurity diffusion prevention layer having a band gap smaller than that of the overflow prevention layer, the first semiconductor layer, and the second semiconductor layer to prevent diffusion of impurities of a first conductivity type.n n n n Impurity diffusion prevention layer, active layer, laser diode, GaN, guide layer, overflow prevention layer |
| priorityDate | 2005-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.