http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100780617-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_683a67b7fd4f447db492fa7697e3ffeb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bdaf5655b6a3cad6890d1fda5a4dac2 |
| publicationDate | 2007-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100780617-B1 |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | The present invention is to provide a method for manufacturing a semiconductor device that can suppress the generation of voids when manufacturing a field oxide film of the semiconductor device, the present invention to provide a substrate with a trench formed, and the substrate so that the trench is buried A method of manufacturing a semiconductor device, the method comprising: applying an SOG film to an upper portion, and applying a pressure while performing a baking process to homogenize the structure of the SOG film. |
| priorityDate | 2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.