| abstract |
After the barrier layer and the copper film are sequentially formed on the silicon oxide film including the inside of the wiring groove among the silicon oxide film and the silicon nitride film formed on the semiconductor substrate, the wiring is formed by removing the barrier layer and the copper film outside the wiring groove. By selectively growing or preferentially growing tungsten on the wiring, a tungsten film is selectively formed on the wiring. Furthermore, hydrogenation is performed after copper film formation. After the wiring is formed, it is washed with a cleaning liquid such as a solution for removing foreign substances or contaminated metal. After the wiring is formed again, hydrogenation is performed.n n n n Semiconductor integrated circuit device, wiring groove, barrier layer, conductive film, selective growth, preferential growth, hydrogen treatment |