| abstract |
In the high frequency amplification MOSFET having a drain offset region, it is a problem to achieve miniaturization and on-resistance reduction.n n n Conductor plugs 13 (P1) for electrode lead-out are provided on the source region 10, the drain region 9, and the rich through layer 3 (4). The first layer wirings 11s and 11d (M1) are connected to the conductor plugs 13 (P1), respectively, and the conductor plugs 13 (P1) with respect to the first layer wirings 11s and 11d (M1) again. The 2nd layer wiring 12s and 12d for backing are connected on ()). |