http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100776154-B1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a17dc10b5bd6e5f0df2ce1aab3bbdce
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14698
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1462
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
filingDate 2006-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_321ea8a9b274105ff80a48fcee6275a4
publicationDate 2007-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100776154-B1
titleOfInvention Manufacturing Method of Semiconductor Device
abstract The present invention relates to a method of manufacturing a semiconductor device that can easily remove defects and improve the characteristics of the device by changing the sinter process conditions in the semiconductor device.n n n A method of manufacturing a semiconductor device according to the present invention includes the steps of forming a transistor region on a semiconductor substrate; Forming a protective film on the semiconductor substrate; Forming a nitride film on the protective film; The nitride substrate is formed on the semiconductor substrate comprises the step of annealing at 1 ~ 10 torr pressure, 250 ~ 450 ℃ temperature conditions.n n n As a result, the present invention is capable of performing a sinter process within a short time by forming a protective film in a semiconductor device and then performing heat treatment at low pressure using hydrogen gas or deuterium gas, and also has an effect of improving device characteristics.
priorityDate 2006-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 26.