http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100773305-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02351 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate | 2000-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100773305-B1 |
| titleOfInvention | Hardening Spin-On Dielectric Film Using Electron Beam Radiation |
| abstract | The electron beam exposure method of the present invention provides a means for curing a spin-on-glass or spin-on polymer dielectric material formed on a semiconductor wafer. The dielectric material insulates the conductive metal layer and flattens the topography during the process of fabricating the multilayer integrated circuit. The method uses a large uniform electron beam exposure system in a soft vacuum environment. The waiter coated with the uncured dielectric material is irradiated with electrons of sufficient energy to pass through the entire thickness of the dielectric material and simultaneously heated by an infrared heater. The characteristics of the cured dielectric material can be modified by adjusting the process conditions such as the electron beam total irradiation amount and energy, the temperature and atmosphere of the wafer. |
| priorityDate | 1999-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.