http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100773123-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C10-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C10-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C26-00 |
| filingDate | 2005-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100773123-B1 |
| titleOfInvention | Method of forming polycrystalline silicon thin film by two-step deposition |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a polycrystalline silicon thin film. In particular, a silicon precursor and a plasma are alternately supplied into a reaction tube to form an crystalline silicon thin film of an atomic layer at a temperature of less than 500 ° C. By forming a separate upper silicon thin film using the silicon thin film as a seed layer, the present invention relates to a method for forming a polycrystalline silicon thin film by two-step deposition capable of forming a polycrystalline silicon thin film at a relatively low temperature.n n n In the method of forming a polycrystalline silicon thin film by two-step deposition of the present invention, the silicon precursor supply and the reducing plasma supply are sequentially performed into the reaction tube into which the substrate is introduced to deposit a crystalline silicon thin film of an atomic layer having a predetermined thickness on the substrate. And the step of depositing the upper silicon thin film on the seed layer using the crystalline silicon thin film of the atomic layer as a seed layer.n n n n Atomic layer, crystalline, silicon thin film |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101138610-B1 |
| priorityDate | 2005-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.