http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100771536-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 |
filingDate | 2005-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2007-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2007-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100771536-B1 |
titleOfInvention | Method of manufacturing semiconductor device having recess channel |
abstract | A method of manufacturing a semiconductor device having a recess channel of the present invention includes forming a hard mask film pattern on an active region of a semiconductor substrate defined by an isolation layer, and oxidizing the semiconductor substrate exposed by the hard mask film pattern. Forming a sacrificial oxide film, removing the sacrificial oxide film to form a recess region, and etching the semiconductor substrate of the recess region exposed by the hard mask film pattern to a predetermined depth to form a recess channel trench. Removing the hard mask film pattern; forming a gate insulating film on the semiconductor substrate in the recess channel trench; and filling the recess channel trench with the gate electrode pattern overlapping the recess channel trench. Forming a step.n n n n Recess channel, trench, corner, field concentration |
priorityDate | 2005-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.