http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100765386-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2005-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100765386-B1 |
| titleOfInvention | Gallium nitride compound semiconductor and method for manufacturing same |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gallium nitride compound semiconductor and a method for manufacturing the same, comprising a substrate, a buffer layer deposited using an organic metal on the substrate, and a gallium nitride compound semiconductor layer formed on the buffer layer. And it provides a production method thereof. That is, by forming an SiCAlN film or a SiCN: H film as a buffer layer on the substrate using an organic metal, it is possible to reduce the lattice defect between the substrate and the GaN semiconductor film, thereby reducing the strain caused by the lattice defect, and the SiCAlN film or the SiCN: H film It can be used as an anti-reflection layer to effectively emit the light generated in the active layer can improve the erection of the light of the LED, it can improve the reliability.n n n n Organic Metals, Buffer Layer, SiCAlN, Lattice Defects, Strain, Light Emitting Diode |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101006480-B1 |
| priorityDate | 2005-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.