| abstract |
From a substrate comprising from about 0.01 wt% to about 10 wt% of at least one fluoride compound, from about 10 wt% to about 95 wt% of sulfoxide or sulfone solvent, and from about 20 wt% to about 50 wt% of water Disclosed are compositions for stripping photoresist, washing residues and etching silicon oxide. The composition may contain a basic amine compound, a cosolvent, a corrosion inhibitor, a chelating agent, a surfactant, an acid and a base. |