http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100763985-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1292 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate | 2006-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2007-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2007-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100763985-B1 |
titleOfInvention | Method of manufacturing thin film transistor, electro-optical device, and electronic device |
abstract | This invention makes it a subject to provide the manufacturing method of TFT which simplified the manufacturing process and improved productivity.n n n In the method of manufacturing the thin film transistor of the present invention, a process of forming the precursor BP1 of the first bank corresponding to the formation region of the gate electrode 80 on the substrate P by polysilazane solution, and on the precursor BP1 Forming the precursor BP2 of the second bank corresponding to the formation region of the source electrode and the drain electrode at a predetermined position of the polysilazane liquid by the droplet ejection method; and forming the precursor BP1 and the precursor BP2. Firing together to form a first bank B1 and a second bank B2 together with an inorganic layer having a polysiloxane as a skeleton; and a region partitioned by the precursor BP1 or the first bank B1. A step of forming the gate electrode 80 on the substrate, a step of forming the semiconductor layer on the upper portion of the gate electrode 80 via an insulating film, and a source electrode in a region partitioned by the second bank B2. And forming a drain electrode The.n n n n Thin film transistor, precursor, bank, electrode layer, cap layer |
priorityDate | 2005-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.