| abstract |
The present invention relates to a semiconductor package and a method of manufacturing the same, comprising: a semiconductor chip including a metal pad formed in a predetermined region on an upper portion of a semiconductor substrate on which a device structure for manufacturing a semiconductor device is formed and a bump electrode formed to be connected to the metal pad; And a passivation film formed on the entire surface of the semiconductor chip except for the upper surface of the bump electrode, thereby preventing difficulties of the conventional flip chip bonding epoxy underfill process, process complexity, and high cost due to the application of the molding compound process and the solder ball process. Disclosed is a semiconductor package and a method of manufacturing the same, which can prevent damage to a semiconductor chip side portion caused by not forming a passivation film on a semiconductor chip side portion of a conventional wafer level package. |