http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100761867-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_717c792fca7cc9c290c9db33e8fe078b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1033 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02592 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate | 2006-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebde3b0e9918687db630a2a00fab4676 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce8efe4e883b827fb68a01545a9b535f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b10cfdf504a2e9894c333056c4be21a |
| publicationDate | 2007-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100761867-B1 |
| titleOfInvention | Nitride-based semiconductor device and manufacturing method thereof |
| abstract | The present invention relates to a structure for reducing ohmic junction resistance of a GaN semiconductor device and a method of manufacturing the same. The nitride semiconductor device according to the present invention includes a structure in which an ohmic junction layer is formed on a GaN semiconductor layer, and further includes a silicon atom diffusion layer formed in the GaN semiconductor layer below the ohmic junction layer to reduce ohmic junction resistance. It is characterized by including. In addition, the method of manufacturing a nitride-based semiconductor device according to the present invention, the method of forming an ohmic junction layer on a GaN-based semiconductor layer, the method comprising: forming an amorphous silicon film on the GaN-based semiconductor layer of the predetermined ohmic junction region; Forming a silicon oxide film on the GaN-based semiconductor layer to surround the entire amorphous silicon film; Irradiating annealing the laser pulse so that silicon atoms in the amorphous silicon film diffuse into the GaN semiconductor layer under the predetermined ohmic junction region, and removing the silicon oxide layer and the amorphous silicon layer, and removing the GaN semiconductor layer of the predetermined ohmic junction region. And forming a ohmic junction layer thereon. |
| priorityDate | 2006-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.