http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100761541-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60Y2400-306 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L9-00 |
| filingDate | 2004-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100761541-B1 |
| titleOfInvention | Manufacturing method of pressure sensor |
| abstract | The present invention includes sequentially forming a first diffusion barrier layer, a first insulating layer, an etch stop layer, and a second insulating layer on an upper portion of a lower metal wiring; Forming a pressure sensor region by etching the second insulating layer, the etch stop layer, and the first insulating layer corresponding to the region where the pressure sensor is to be formed in the upper portion of the lower metal wiring, and then forming a polyimide layer to fill the pressure sensor region step; An upper portion of the lower metal interconnection to form a damascene pattern by etching the second insulation layer, the etch stop layer, the first insulation layer, and the first diffusion barrier layer corresponding to the region where the metal interconnection is to be formed, and to embed the damascene pattern. Forming a metal wiring; Forming an opening for exposing the polyimide layer by forming a second diffusion barrier layer over the entire surface and then etching the second diffusion barrier layer and the polyimide layer having a predetermined thickness with a predetermined width; Removing the polyimide layer through the opening; Forming a TaN layer over the entire surface, wherein the TaN layer is formed to extend by a predetermined depth into the space where the polyimide layer is removed through the opening; Etching away the TaN layer on top of the upper metal wiring and forming an isolation layer and an interlayer insulating film over the entire surface; Etching the insulating layer, the interlayer insulating layer, and the second diffusion barrier layer on the upper metal wiring to expose the upper metal wiring; Forming a plug connected to the upper metal wire on the exposed upper metal wire; And removing the interlayer insulating layer on the pressure sensor region after forming a metal pad on the plug to allow the metal pad to be connected to the upper metal wire through the plug.n n n n Opening, TaN layer, polyimide layer |
| priorityDate | 2004-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.