http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100761351-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 2001-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100761351-B1 |
| titleOfInvention | Capacitor bottom electrode formation method using electroplating method |
| abstract | The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of forming a capacitor lower electrode using an electroplating method. According to the present invention, after forming a capacitor lower electrode by electroplating, a sacrificial film such as a thin liner is formed on the upper part thereof, and then a spacer shape is formed on the sidewall of the lower electrode through front etching, and the remaining seed layer is etched. It is an object of the present invention to provide a method for forming a capacitor lower electrode using an electroplating method, in which a residue is attached to the sacrificial layer and then the sacrificial layer is removed to remove the residue. To this end, the present invention comprises the steps of sequentially forming an etch stop layer and a lower electrode seed layer on the substrate is completed a predetermined process; Forming a lower electrode on a predetermined region on the seed layer using an electroplating method; Forming a sacrificial layer having a spacer shape on the sidewalls of the lower electrode; Removing seed layers in regions other than the lower electrode; And it provides a capacitor lower electrode forming method using an electroplating method comprising the step of removing the sacrificial film.n n n n Precious metals, sacrificial layer, seed layer, dry etching, residues. |
| priorityDate | 2001-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.