http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100760113-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2002-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100760113-B1 |
| titleOfInvention | Resist pattern thick film material, resist pattern, and its manufacturing method, and semiconductor device and its manufacturing method |
| abstract | The resist pattern thickening material of this invention contains resin containing a resin, a crosslinking agent, and a cyclic structure containing compound, or contains a cyclic structure in one part. The resist pattern before thickening of this invention has a surface layer on a resist pattern, and the etching rate (nm / s) ratio (inner layer / surface layer) of this surface layer and an inner layer under the same conditions is 1.1 or more. In the manufacturing method of the resist pattern of this invention, after forming the resist pattern before thickening, the said thickening material is apply | coated to the resist pattern surface before this thickening. The manufacturing method of the semiconductor device of this invention forms the resist pattern before thickening on a base layer, and apply | coats the said thickening material to the surface of the resist pattern before thickening, and thickens the resist pattern before the thickening; And a patterning step of patterning the underlying layer by etching using this pattern as a mask.n n n n Resist pattern thick film material, cyclic structure containing compound, resin containing cyclic structure in one part, surface layer, etching rate ratio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100941040-B1 |
| priorityDate | 2001-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 137.