http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100758296-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2006-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100758296-B1 |
| titleOfInvention | How to form a trench |
| abstract | A method of forming a trench is provided. The mask pattern exposing the semiconductor substrate is formed by a dry etching process. The polymer formed on the sidewalls of the mask pattern is removed. The semiconductor substrate exposed by the mask pattern is etched to form a trench having a single slope at one side thereof. The polymer can be precisely removed by using a plasma of any one or two or more gases selected from the group consisting of oxygen, nitrogen, and inert gases.n n n n Trench, Plasma, Mask Pattern, Polymer |
| priorityDate | 2006-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.