| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f2c895e21e0ac7949ca97bb4e405454c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2e9077cc4c0e7ec41929dbf53a03b28c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_18927ae97511853ea03b1b22f4f0f68a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G59-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0387
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0005 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G59-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G73-10 |
| filingDate |
2005-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a2bc23cd9a39b88bdff51673d7cccc5 |
| publicationDate |
2007-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100757108-B1 |
| titleOfInvention |
Hard mask polymer for forming fine pattern of semiconductor device and composition for hard mask containing same |
| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hard mask polymer and a composition containing the same for forming a fine pattern of a next-generation semiconductor device, and using a polyamic acid composition having high heat resistance in forming an etched layer pattern of a semiconductor device. By forming a polyamic acid film by a spin coating method and an additional thermal process, the polyamic acid film is used as a hard mask to help easily etch a fine pattern into an underlying layer. |
| priorityDate |
2005-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |