http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100755116-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a17dc10b5bd6e5f0df2ce1aab3bbdce |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate | 2006-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4e87ad17d9509e48d7845bb239b13e8 |
| publicationDate | 2007-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100755116-B1 |
| titleOfInvention | Method of forming silicon nitride film |
| abstract | The present invention relates to a method for forming a silicon nitride film in a PECVD batch type chamber. That is, in the present invention, in the PECVD silicon nitride film forming method, in order to solve the conventional problem that the thickness of the oxide film is reduced after the RF plasma cleaning process in the PECVD silicon nitride film deposition process on the wafer in the PECVD device, By increasing the number of wafers, the deposition time is compensated so that the deposition time of the silicon nitride film on the wafer is set to be gradually longer, so that the thickness of the silicon nitride film on the wafer is uniformly deposited regardless of the RF plasma cleaning cycle, thereby improving semiconductor yield. Will be. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160064288-A |
| priorityDate | 2006-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.