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filingDate 2006-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6402ea6331affe476c13f8a51077abd
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publicationDate 2007-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100754555-B1
titleOfInvention Method for Analyzing Boron Concentration in Silicon Using Stabilizer
abstract The present invention relates to a method for quantitatively analyzing the concentration of boron in silicon, and in the present invention, in the process of decomposing silicon, which is a pretreatment process for analyzing the concentration of boron, into a decomposition solution, to form a complex by combining with boron in the decomposition solution. By adding a complexing agent, boron is prevented from volatilizing. Therefore, according to the present invention, it is possible to prevent the volatilization of boron, which tends to be volatilized in the pretreatment process, so that the concentration of boron contained in silicon is equal to or less than ppm for silicon not only in thin wafer form but also in amorphous or particle form. Accurate and inexpensive quantification up to the level.
priorityDate 2006-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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