http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100745892-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D1-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 |
| filingDate | 2001-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100745892-B1 |
| titleOfInvention | Photoresist Cleaning Liquid Composition |
| abstract | The present invention relates to a photoresist cleaning liquid composition, and more particularly, to a photoresist cleaning liquid composition used to clean a semiconductor substrate in a final process after development, and a pattern forming method using the same when forming a photoresist pattern.n n n Such a cleaning liquid composition of the present invention includes a surfactant compound consisting of a salt of an alcohol amine and a sulfonic acid compound of Formula 1, an alcohol compound, and water, and has a lower surface tension than distilled water, which is used in the prior art, so that the cleaning liquid composition of the present invention is used. By doing so, the pattern collapse phenomenon can be improved.n n n [Formula 1]n n n n n n n n Wherein R 1 and R 2 are hydrogen, C 1 -C 10 alkyl or C 1 -C 10 alkylalcohol, n is an integer from 1 to 10. |
| priorityDate | 2001-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.