http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100745891-B1
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 |
filingDate | 2001-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2007-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2007-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100745891-B1 |
titleOfInvention | Photoresist Cleaning Liquid Composition |
abstract | The present invention relates to a photoresist cleaning liquid composition, and more particularly, to a photoresist cleaning liquid composition used to clean a semiconductor substrate in a final process after development, and a pattern forming method using the same when forming a photoresist pattern.n n n Such a cleaning liquid composition of the present invention includes a surfactant, an alcohol compound, and water consisting of a salt of an alcohol amine and a carboxylic acid compound of Formula 1, and has a lower surface tension than distilled water used in the prior art. By using it, the pattern collapse phenomenon can be improved.n n n [Formula 1]n n n n n n n n Wherein R, R 1 and R 2 are each hydrogen, alkyl or C 1 -C 10 alcohols, the C 1 -C 10, n n n n is an integer from 1 to 10. |
priorityDate | 2001-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 62.