http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100745891-B1

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filingDate 2001-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2007-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100745891-B1
titleOfInvention Photoresist Cleaning Liquid Composition
abstract The present invention relates to a photoresist cleaning liquid composition, and more particularly, to a photoresist cleaning liquid composition used to clean a semiconductor substrate in a final process after development, and a pattern forming method using the same when forming a photoresist pattern.n n n Such a cleaning liquid composition of the present invention includes a surfactant, an alcohol compound, and water consisting of a salt of an alcohol amine and a carboxylic acid compound of Formula 1, and has a lower surface tension than distilled water used in the prior art. By using it, the pattern collapse phenomenon can be improved.n n n [Formula 1]n n n n n n n n Wherein R, R 1 and R 2 are each hydrogen, alkyl or C 1 -C 10 alcohols, the C 1 -C 10, n n n n is an integer from 1 to 10.
priorityDate 2001-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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