http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100745811-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1836 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02963 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1864 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2005-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100745811-B1 |
| titleOfInvention | Method for manufacturing X-type zinc oxide thin film and method for manufacturing zinc oxide-based optoelectronic device using same |
| abstract | The present invention relates to a method of manufacturing a p-type zinc oxide (ZnO) thin film and a method of manufacturing a zinc oxide-based optoelectronic device using the same, including the steps of forming a p-type ZnO thin film doped with group V elements, and oxygen of the p-type ZnO thin film. Provided is a p-type ZnO thin film manufacturing method comprising the step of heat-treating the p-type ZnO thin film in an oxygen atmosphere to compensate for the n-type property due to deficiency. In addition, the present invention also provides a photoelectric device manufacturing method employing the p-type ZnO thin film manufacturing method described above.n n n n Zinc oxide (ZnO), annealing, arsenic (As), opto-electronic devices, light emitting diodes (LEDs), laser diodes |
| priorityDate | 2005-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.