http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100744664-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2001-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100744664-B1 |
| titleOfInvention | Method for producing ruthenium membrane by chemical vapor deposition |
| abstract | The present invention is to provide a method for producing a ruthenium film by chemical vapor deposition to improve the deposition rate, morphology and leakage current characteristics, the present invention is to make a ruthenium film nucleus by flowing a Ru (od) 3 source on the substrate And a second step of growing a ruthenium film by flowing a Ru (EtCp) 2 source onto the substrate on which the nucleus of the ruthenium film is generated. n n n n Capacitor, BST, Ruthenium Source, Chemical Vapor Deposition |
| priorityDate | 2001-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.