| abstract |
A semiconductor package using silver (Ag) bumps and a method of forming the same are disclosed. To this end, the present invention provides a film circuit board having a lead in the form of a conductive circuit pattern, a semiconductor chip bonded to the film circuit board through bumps, and silver (Ag) formed on a bonding surface of the film circuit board and the semiconductor chip. A semiconductor package including a metal compound layer of indium (In) and a method of manufacturing the same are provided. According to this, the silver bump of the semiconductor chip is bonded to the solder containing indium on the lead to prevent abnormal growth of silver-tin, thereby preventing short circuit, and because the melting point of indium is lower than the melting point of tin, at a lower temperature than the process of applying pure tin It is possible to form a metal compound layer including silver-indium to reduce the stress applied to the semiconductor package. |