http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100742337-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-203 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208 |
| filingDate | 2005-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100742337-B1 |
| titleOfInvention | Silicon Single Crystal Growth Method |
| abstract | The present invention relates to a silicon single crystal growth method, and more particularly, to a silicon single crystal growth method by Czochralski method, comprising the step of controlling the diffusion of vertical point defects in a cooling section during pulling up of a silicon single crystal. Silicon single crystal growth method.n n n According to the present invention, not only the average pulling speed of the silicon single crystal, that is, the axial ΔV can be effectively controlled, but also the productivity of the high quality silicon single crystal can be increased.n n n n Defects, average pulling speed, instantaneous pulling speed, temperature gradient |
| priorityDate | 2005-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.