| abstract |
A method of forming a silicon oxide etchant and a method for forming a contact hole using the same are disclosed to prevent damage of a metal silicide exposed during a process of expanding a contact hole. The silicon oxide etchant has a composition containing 0.01 to 2% by weight of ammonium bifluoride, 2 to 35% by weight of an organic acid, 0.05 to 1% by weight of an inorganic acid, and an extra low polar organic solvent. When the contact hole is formed using the etchant having the above composition, damage to the metal silicide pattern may be minimized. |