| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B1-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2003-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2007-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100738066-B1 |
| titleOfInvention |
Method for forming silicide film with excellent thermal stability, semiconductor device, semiconductor memory device and method for manufacturing these devices with silicide film formed by this method |
| abstract |
Disclosed are a method for forming a silicide film having excellent thermal stability, a semiconductor device and a semiconductor memory device provided with the silicide film formed by the method, and a manufacturing method of these devices. The present invention provides a method for forming a nickel mono silicide film containing germanium by sequentially depositing a germanium film and a nickel film on a silicon-containing substrate, and then heat treating the resultant, and a semiconductor device having the nickel mono silicide film thus formed; A semiconductor memory device and a method of manufacturing the device are provided. |
| priorityDate |
2003-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |