http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100733057-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1292 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate | 2005-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100733057-B1 |
| titleOfInvention | Pattern forming method, wiring forming method, semiconductor device, TFT device, electro-optical device and electronic device |
| abstract | The present invention provides a pattern forming method, a wiring forming method, a semiconductor device, a TFT device, an electro-optical device, and an electronic device capable of forming a fine pattern made of wiring on the surface of a substrate. The gate wiring 3 and the gate electrode 5 of the TFT 1 formed using the droplet ejection apparatus 40 include a gate intermediate layer 10 made of Mn, a gate conductive layer 11 made of Ag, and Ni. It has the gate coating layer 12 which consists of. The wiring forming step has a close contact with the TFT substrate 2 and a gate wiring region 3a and a gate electrode in order to provide an intermediate layer having lyophilic with respect to the droplet 32 forming the gate conductive layer 11. A step of discharging the droplet 31 of the intermediate layer forming functional liquid to the region 5a and the droplet 32 to the gate wiring region 3a to form the gate conductive layer 11 overlying the gate intermediate layer 10. And a step of self-flowing the droplet 32 into the gate electrode region 5a by the affinity of the droplet 32 with the gate interlayer 10.n n n n TFT substrate, gate wiring, gate wiring region, gate electrode, source electrode, gate insulating film, gate intermediate layer, droplet discharge device, droplet discharge head, discharge nozzle |
| priorityDate | 2004-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.