http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100732282-B1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
filingDate 2005-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96bd32a5f5c69e4cd7ed67511c4864cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aca211af9f781e86015cff02daf209cc
publicationDate 2007-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100732282-B1
titleOfInvention Method of forming a semiconductor device
abstract The present invention relates to a method of forming a semiconductor device, in order to solve the problem of falling of a cylindrical storage electrode in forming a capacitor of the semiconductor device, the sacrificial layer for forming the storage electrode is formed of an amorphous carbon layer, in this process Due to the light absorption of the amorphous carbon layer, the alignment process of the storage electrode contact plug and the photoresist mask pattern for the storage electrode cannot be performed normally. A polysilicon layer is further added on top of the SiON film used as a hard mask of the amorphous carbon layer. The present invention relates to a method for forming a semiconductor device which can reduce the risk of misalignment and can stably perform a capacitor forming process.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100925032-B1
priorityDate 2005-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100539268-B1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559581

Total number of triples: 21.