http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100728962-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02T50-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31616 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31641 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3142 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2005-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100728962-B1 |
| titleOfInvention | Capacitor for semiconductor device having zirconium oxide film and manufacturing method thereof |
| abstract | Disclosure of Invention The present invention provides a capacitor of a semiconductor device and a method of manufacturing the same, which can secure a leakage current characteristic while securing a charging capacity required for a next generation DRAM product having a metal wiring of 70 nm or less, and a dielectric film of the capacitor of the present invention. Silver Al2O3 / ZrO2, ZrO2 / Al2O3, (ZrO2 / Al2O3) n (2≤n≤10), (Al2O3 / ZrO2) n (2≤n≤10), ZrO2 / Al2O3 / ZrO2 triple layer structure, nitrided ZrO2 A single layer of a thin film, a double layer of an Al2O3 thin film and a nitrided ZrO2 thin film, a double layer of an Al2O3 thin film and a nitrided ZrO2 thin film, a triple layer of a ZrO2 thin film, an Al2O3 thin film and a nitrided ZrO2 thin film are applied. Dielectric films of ZrO2 (Eg = 7.8eV, ε = 20-25) film with large band gap energy (Eg) and Al2O3 (Eg = 8.7eV, ε = 9) film with excellent thermal stability. By constructing a multi-layer dielectric film structure, it is possible to improve the suppression of leakage current generation. The breakdown voltage value can be increased, and a large-capacity charging capacity can be obtained. Thus, a capacitor having sufficient leakage capacity and breakdown voltage characteristics required for a highly integrated memory product of 70 nm or less can be implemented. .n n n n Capacitor, Zirconium Oxide, ALD, Multi-Dielectric Film |
| priorityDate | 2004-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.