http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100725550-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2005-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100725550-B1 |
| titleOfInvention | Slurry composition for copper wiring polishing and metal wiring polishing method using the same |
| abstract | The present invention relates to a copper wiring polishing slurry composition comprising deionized water, an abrasive, an oxidizing agent, and a phosphonic acid-based chelating agent, comprising: a slurry for polishing copper wiring of a semiconductor device; It is about manufacture. According to the present invention, it is possible to provide a CMP slurry composition having excellent polishing rate and selectivity compared to conventional polishing slurries.n n n Polishing slurry compositions, copper wiring, phosphonic acid chelating agents, abrasives, oxidants. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10428242-B2 |
| priorityDate | 2005-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 69.