| abstract |
An object of the present invention is to improve the moisture resistance of FeRAM.n n n After the probe test using the pad 6, the metal film 9 is formed so as to cover the pad 6 provided in the opening of the protective film 7 and from the pad 6 to the outer peripheral part of the opening of the protective film 7. Then, metal bumps 10 are formed on the metal film 9. The metal film 9 has a two-layer structure of the first and second metal films 9a and 9b, the lower layer side mainly adheres to the protective film 7, and the upper layer side mainly adheres to the metal bump 10. Choose a material for each. Moreover, the film forming conditions are set so that the metal film 9 of desired film quality or film thickness can be obtained. As a result, intrusion of moisture or the like into the ferroelectric capacitor 4 from the pad 6 and its surroundings can be prevented, and the occurrence of potential inversion abnormality due to moisture or the like after intrusion can be effectively suppressed. |