| abstract |
The present invention provides various methods of forming such multiphase ultra low k films as well as polyphase ultra low k films exhibiting improved elastic modulus and hardness. The multiphase, ultra low k film contains Si, C, O, and H atoms and has a dielectric constant of about 2.4 or less, nanosized pores or pores, about 5 or more elastic modulus, and about 0.7 or more hardness. Preferred multiphase, ultra low k films contain Si, C, O and H atoms and have a dielectric constant of about 2.2 or less, nano-sized pores or pores, about 3 or more elastic modulus and about 0.3 or more hardness. n n Multiphase, ultra low k film, plasma enhanced chemical vapor deposition (PECVD) reactor |