| abstract |
The present invention relates to a solder alloy, and relates to a Sn-Bi-based solder alloy and a semiconductor device using the same, which can improve the reliability of a junction between a semiconductor chip and a substrate. The semiconductor device of the present invention comprises a semiconductor chip having a plurality of gold (Au) bumps, a substrate having a metal wiring to which the gold bumps are bonded, and a Sn-Bi-based solder alloy interposed between the gold bumps and the metal wiring to be bonded to each other. It includes a junction portion to include, the Sn-Bi-based solder alloy of the junction is characterized in that bismuth (Bi) is contained in 20 to 55Wt%.n n n According to this, gold is not easily diffused into the Sn-Bi-based solder alloy in the liquid state during the reflow process for joining the semiconductor chip and the substrate, so that a large amount of mechanically vulnerable AuSn 4 intermetallic compound is formed at the junction. Can be suppressed. Therefore, most of the joint can be maintained by Sn-Bi-based solder alloy, and the reliability of the joint can be improved.n n n n Bismuth (Bi), Intermetallic Compounds, Stud Bumps, Flip Chips, Solder Alloys |