http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100717809-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2005-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100717809-B1 |
| titleOfInvention | Method for manufacturing semiconductor device with dual polysilicon gate |
| abstract | The present invention provides a semiconductor device having a dual polysilicon gate capable of preventing device degradation, that is, a threshold voltage increase and a polysilicon depletion phenomenon, which occurs during a dual polysilicon gate process, and a method of manufacturing the same. The semiconductor device has a semiconductor substrate in which an NMOSFET region and a PMOSFET region are defined; A Hf-based gate oxide film formed on the semiconductor substrate in the NMOSFET region; An Al-based gate oxide film formed on the semiconductor substrate in the PMOSFET region; An n + polysilicon gate formed on the Hf-based gate oxide film; And a p + polysilicon gate formed on the Al-based gate oxide film, and the present invention uses an Hf-based gate oxide film as a gate oxide film of a MOSFET during a CMOS device process, and an Al-based gate oxide film as a gate oxide film of a PMOSFET. By using the gate oxide film, it is possible to fundamentally block the threshold voltage increase or the polysilicon depletion phenomenon generated when the metal oxide film is used as the gate oxide film, thereby improving the characteristics of the semiconductor device.n n n n Dual polysilicon gate, Al gate oxide, Hf gate oxide, polysilicon depletion |
| priorityDate | 2005-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.