http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100717771-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02667 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-01 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2006-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f1b9478a164ed53c6f55b810918dd59 |
| publicationDate | 2007-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100717771-B1 |
| titleOfInvention | Contact formation method of semiconductor device |
| abstract | The present invention is to provide a method for forming a contact of a semiconductor device for reducing the contact resistance of the semiconductor device while ensuring mass production than SPE or SEG, the present invention is to form a contact hole on the semiconductor substrate, the contact hole Forming a silicon layer on a bottom portion, performing ion implantation to amorphousize a portion of the semiconductor substrate, and heat treating to epitaxially grow a portion of the amorphous semiconductor substrate and a silicon layer, wherein the epitaxially grown Forming a metal silicide and a metal film on the silicon layer, the present invention is effective in reducing the contact resistance, reliability and yield of the semiconductor device while ensuring mass production than SPE or SEG.n n n n Epitaxial silicon, contact resistance, polysilicon, solid phase epitaxy, single crystal silicon layer |
| priorityDate | 2006-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 55.