http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100714269-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2004-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100714269-B1 |
| titleOfInvention | Metal layer formation method used in semiconductor device manufacturing |
| abstract | The present invention relates to a method for forming a metal layer suitable for the manufacture of a semiconductor device capable of increasing or maximizing the production yield, the method of forming the mixed gas consisting of hydrogen gas and metal chloride compound gas in a chamber having a predetermined closed space And simultaneously supplying purge gas for a predetermined time to form a first metal layer on the semiconductor substrate on which the conductive layer is exposed by a plasma chemical vapor deposition method; And alternately supplying the hydrogen gas and the metal chloride compound gas alternately with a predetermined time while the purge gas is continuously supplied to the chamber to form a second metal layer on the first metal layer by the plasma chemical vapor deposition method. By including the step, the plasma chemical vapor deposition method, which is a low temperature process, can be prevented from deterioration of the semiconductor device due to high heat when forming the metal layer, thereby improving production yield.n n n n Titanium chloride (TiCl4), argon (Ar), plasma enhanced chemical vapor deposition (PECVD), radio frequency (RF) |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190055531-A |
| priorityDate | 2004-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.