abstract |
A low dielectric constant coating material suitable as an interlayer insulating film material is provided. Moreover, the semiconductor device which has a low dielectric constant film and is highly reliable is provided.n n n The low dielectric constant film forming material is obtained by dissolving siloxane resin and polycarbosilane in a solvent. Using this solution, a low dielectric constant film containing a siloxane resin and a polycarbosilane bonded to the siloxane resin is formed. |