| abstract |
The present invention provides a method for forming a silicon oxide film useful as an electric insulator film, dielectric film, protective film, or the like for use in LSIs, thin film transistors, photoelectric conversion devices, photoconductors, and the like. Contains a polysilane compound represented by the formula Si n R m (where n represents an integer of 3 or more, m represents an integer from n to 2n + 2, and a plurality of Rs independently represent a hydrogen atom or an alkyl group) A coating film is formed, and then the coating film is oxidized to form a silicon oxide film.n n n n Silicon oxide film, polysilane, oxidant, coating film, heat treatment, radiation, LSI, thin film transistor, electrical insulator film, dielectric film |