http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100702548-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0758 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 |
| filingDate | 2003-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100702548-B1 |
| titleOfInvention | Resist for Double Layer Lithography with Low Silicon Degassing |
| abstract | The invention relates to the presence of phase forming polymers with silicon-containing acid-stable appendages, especially in bilayer or multilayer lithography applications using phased radiation having wavelengths of 193 nm or less, with low silicon degassing and high resolution lithography performance. Provided is a silicon-containing resist composition. The resist composition of the present invention is preferably also characterized by the substantial absence of silicon-containing acid-labile moieties.n n n Resist Composition, Silicon Degassing, Multilayer Lithography |
| priorityDate | 2002-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.