http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100701555-B1

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
filingDate 2003-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2007-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100701555-B1
titleOfInvention Semiconductor device and display device using the same
abstract In the reverse staggered MOSFET 1, a gate insulating layer 4 made of zinc oxide, which is a channel layer 5 which is the semiconductor layer, is formed of amorphous aluminum oxide. By such a structure, the defect level in the interface between the channel layer 5 and the gate insulating layer 4 is reduced, and the performance equivalent to the semiconductor device which produced all the laminated films by the crystalline laminated film can be obtained. . Such a method can also be applied to a forward staggered MOSFET and the like, and has high versatility.n n n n Semiconductor layer, zinc oxide, group II oxide, amorphous, aluminum oxide, field effect transistor (FET)
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101810261-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130113979-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102122393-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8618543-B2
priorityDate 2002-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63101740-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08264794-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426098968
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14782
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449871035
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9989226
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453080860
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID451818717
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6327157
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID451819949
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID16212531
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14806
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID447871845
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520996
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID166598
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559192
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID21872940
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID21872939

Total number of triples: 37.