http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100700435-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C2033-426 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B29C33-424 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
filingDate | 2005-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2007-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2007-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100700435-B1 |
titleOfInvention | Organofluorinated silicon fluoride compound for mold production used for pattern replication, organic-inorganic hybrid mold for pattern replication using the same, pattern replication method using the mold and pattern replicated by the method |
abstract | The present invention relates to a fluorinated organosilicon compound for mold production used for pattern replication, an organic-inorganic hybrid mold for pattern replication using the same, a pattern replication method using the mold, and a pattern replicated by the method. Preferably, a novel mold fluorinated organosilicon compound for use in both the nanoimprint process and the soft lithography patterning process, which does not require surface treatment such as release agent treatment, and has a certain level of strength, The present invention relates to an organic-inorganic hybrid mold for pattern replication, a pattern replication method using the mold, and a pattern replicated by the method.n n n n Organosilicon fluoride, organic-inorganic, hybrid, mold, pattern, replica |
priorityDate | 2005-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.