http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100699739-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F04D25-08 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F3-03543 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2000-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100699739-B1 |
| titleOfInvention | III-V compound semiconductor |
| abstract | Formula In u Ga v Al w N (u + v + w = 1, 0 u 1, 0 v 1, 0 w A layer formed from the first group III-V compound semiconductor represented by 1) and the layer III-V compound semiconductor as well as the second group III-V compound semiconductor, which will be described later, on the layer. On the formed pattern and the first group III-V compound semiconductor and the pattern, the general formula In x Ga y Al z N (x + y + z = 1, 0 x 1, 0 y 1, 0 z A group III-V compound semiconductor having a layer formed from a second group III-V compound semiconductor represented by 1), wherein the reflection X-ray locking curve of the group III-V compound semiconductor ( A group III-V compound semiconductor is provided, characterized in that the full width at half maximum (FWHM) of the reflection X-ray rocking curve) is 700 seconds or less regardless of the X-ray incident direction. The group III-V compound semiconductor, which is a high quality semiconductor, is suppressed from generating low angle grain boundaries. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101468364-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101437768-B1 |
| priorityDate | 1999-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 76.