http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100696955-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 2004-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100696955-B1 |
| titleOfInvention | Bevel etching device of wafer edge and bevel etching method using the same |
| abstract | The present invention is a bevel etching device of the wafer edge that can prevent the pattern attack in the wafer caused by the transition region where the reaction gas and the barrier gas coexist during the bevel etching process of the wafer edge region and the bevel etching method of the wafer edge using the same In order to provide a bevel etching method of the wafer edge of the present invention, the step of mounting the patterned wafer on the rotatable lower assembly, by generating a plasma of the reaction gas to proceed to the etching of the bevel etching target region of the wafer While rotating the wafer while injecting a barrier gas from the center of the wafer to the edge direction to prevent backflow of the plasma, and rinsing while rotating the wafer to remove by-products generated after the etching process. Including the step of proceeding. n n n n Wafer, Bevel Etch, Plasma, Transition Zone, Rotating Shaft, Chuck, Barrier Gas |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180109491-A |
| priorityDate | 2004-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.